TSMC tandem builds exotic new MRAM-based memory with radically lower latency and power consumption
TSMC and Taiwan’s Industrial Technology Research Institute (ITRI) on Thursdayannouncedthat they had jointly developed co-developed a spin-orbit-torque magnetic random-access memory (SOT-MRAM) array chip, the result of a joint development program the tandem announced in 2022. The memory device can be used for computing in memory architectures andlast-level cache, boasting non-volatility, low latencies, and power consumption that is 1% of that of spin-transfer torque (STT) MRAM. In theory, SOT-MRAM has numerous advantages that make it usable for caches and in-memory applications....